Tungsten Copper Heat Sink Substrate

W-Cu heat sink substrates are typically manufactured using powder metallurgy and infiltration techniques, achieving uniform microstructure and strong metallurgical bonding. Surface treatments and custom shapes are available to meet various thermal interface design requirements.

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monfils.chen@mtwkj.com

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Tungsten copper (W-Cu) heat sink substrates are advanced composite materials that combine the high thermal conductivity of copper with the low thermal expansion and high temperature resistance of tungsten. These substrates are specifically engineered for thermal management in high-power electronic devices, where efficient heat dissipation and dimensional stability are critical.

Key Features:
- Material Composition: Typically ranges from W70Cu30 to W90Cu10 (percentage by weight), customizable based on application needs.
- High Thermal Conductivity: Up to 200 W/m·K (depending on Cu content), ensuring rapid heat transfer.
- Low Coefficient of Thermal Expansion (CTE): Closely matches semiconductors like silicon (Si), gallium nitride (GaN), and gallium arsenide (GaAs), minimizing thermal stress.
- Excellent High-Temperature Stability: Withstands harsh operating environments, including vacuum and inert atmospheres.
Applications:
- IGBT modules and power semiconductor devices
- LED packages and laser diode modules
- RF/microwave devices and aerospace electronics
- Hermetic packaging, including lids and base plates
- High-frequency and high-heat flux electronics
Advantages:
- Outstanding heat dissipation performance
- High mechanical strength and reliability
- Excellent vacuum compatibility and corrosion resistance
- Can be precision machined and plated (e.g., Ni, Au) for packaging integration